pb l ead -fr ee ds30429 rev. 2 - 2 1 of 4 dcx (lo-r1) h www.diodes.com diodes incorporated epitaxial planar die construction built-in biasing resistors lead free by design/rohs compliant (note 3) features maximum ratings npn section @ t a = 25 c unless otherwise specified a m l b c h k g d cxxym mechanical data case: sot-563 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 terminal connections: see diagram weight: 0.005 grams (approx.) t c u d o r p w e n r 1 r 1 r 2 r 2 r 1 r 1 r 1 , r 2 r 1 only dcx (lo-r1) h complementary npn/pnp pre-biased small signal sot-563 dual surface mount transistor sot-563 dim min max typ a 0.15 0.30 0.25 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.56 0.60 0.60 l 0.15 0.25 0.20 m 0.10 0.18 0.11 all dimensions in mm schematic diagram, top view p/n r1 (nom) r2 (nom) marking dcx122lh DCX142JH dcx122th dcx142th 0.22k 0.47k 0.22k 0.47k 10k 10k open open c81 c82 c83 c84 characteristic symbol value unit supply voltage v cc 50 v input voltage dcx122lh DCX142JH v in -5 to +6 -5 to +6 v input voltage dcx122th dcx142th v ebo (max) 5v output current all i c 100 ma power dissipation (note 1, 2) p d 150 mw thermal resistance, junction to ambient air (note 1) r ja 833 c/w operating and storage and temperature range t j ,t stg -55 to +150 c note: 1. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. npn section, pnp section, or maximum combined. 3. no purposefully added lead.
ds30429 rev. 2 - 2 2 of 4 dcx (lo-r1) h www.diodes.com electrical characteristics npn section r1, r2 types @ t a = 25 c unless otherwise specified t c u d o r p w e n maximum ratings pnp section @ t a = 25 c unless otherwise specified characteristic symbol value unit supply voltage v cc -50 v input voltage dcx122lh DCX142JH v in +5 to -6 +5 to -6 v input voltage dcx122th dcx142th v ebo (max) -5 v output current all i c -100 ma power dissipation (note 1, 2) p d 150 mw thermal resistance, junction to ambient air (note 1) r ja 833 c/w operating and storage and temperature range t j ,t stg -55 to +150 c note: 1. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. npn section, pnp section, or maximum combined. characteristic symbol min typ max unit test condition input voltage dcx122lh DCX142JH v l(off) 0.3 0.3 v v cc = 5v, i o = 100 a dcx122lh DCX142JH v l(on) 2.0 2.0 v v o = 0.3v, i o = 20ma v o = 0.3v, i o = 20ma output voltage v o(on) 0.3v v i o /i l = 5ma/0.25ma input current dcx122lh DCX142JH i l 28 13 ma v i = 5v output current i o(off) 0.5 a v cc = 50v, v i = 0v dc current gain ddcx122lh dDCX142JH g l 56 56 v o = 5v, i o = 10ma gain-bandwidth product* f t 200 mhz v ce = 10v, i e = 5ma, f = 100mhz * transistor - for reference only electrical characteristics npn section r1-only @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 v i c = 50 a collector-emitter breakdown voltage bv ceo 40 v i c = 1ma emitter-base breakdown voltage dcx122th dcx142th bv ebo 5 v i e = 50 a i e = 50 a collector cutoff current i cbo 0.5 a v cb = 50v emitter cutoff current dcx122th dcx142th i ebo 0.5 0.5 a v eb = 4v collector-emitter saturation voltage v ce(sat) 0.3 v i c = 5ma, i b = 0.25ma dc current transfer ratio dcx122th dcx142th h fe 100 100 250 250 600 600 i c = 1ma, v ce = 5v gain-bandwidth product* f t 200 mhz v ce = 10v, i e = -5ma, f = 100mhz * transistor - for reference only
ds30429 rev. 2 - 2 3 of 4 dcx (lo-r1) h www.diodes.com t c u d o r p w e n * transistor - for reference only characteristic symbol min typ max unit test condition input voltage dcx122lh DCX142JH v l(off) -0.3 -0.3 v v cc = -5v, i o = -100 a dcx122lh DCX142JH v l(on) -2.0 -2.0 v v o = -0.3v, i o = -20ma v o = -0.3v, i o = -20ma output voltage v o(on) -0.3v v i o /i l = -5ma/-0.25ma input current dcx122lh DCX142JH i l -28 -13 ma v i = -5v output current i o(off) -0.5 a v cc = -50v, v i = 0v dc current gain dcx122lh DCX142JH g l 56 56 v o = -5v, i o = -10ma gain-bandwidth product* f t 200 mhz v ce = -10v, i e = -5ma, f = 100mhz electrical characteristics pnp section r1, r2 types @ t a = 25 c unless otherwise specified electrical characteristics r1-only types @ t a = 25 c unless otherwise specified * transistor - for reference only characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 v i c = -50 a collector-emitter breakdown voltage bv ceo -40 v i c = -1ma emitter-base breakdown voltage dcx122th dcx142th bv ebo -5 v i e = -50 a i e = -50 a collector cutoff current i cbo -0.5 a v cb = -50v emitter cutoff current dcx122th dcx142th i ebo -0.5 -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat) -0.3 v i c = -5ma, i b = -0.25ma dc current transfer ratio dcx122th dcx142th h fe 100 100 250 250 600 600 i c = -1ma, v ce = -5v gain-bandwidth product* f t 200 mhz v ce = -10v, i e = 5ma, f = 100mhz ordering information (note 4) device packaging shipping dcx122lh-7 sot-563 3000/tape & reel DCX142JH-7 sot-563 3000/tape & reel dcx122th-7 sot-563 3000/tape & reel dcx142th-7 sot-563 3000/tape & reel notes: 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information cxxym cxx = product type marking code (see page 1) ym = date code marking y = year ex: p = 2003 m = month ex: 9 = september date code key month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw
ds30429 rev. 2 - 2 4 of 4 dcx (lo-r1) h www.diodes.com t c u d o r p w e n -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 deratin g curve - total p , power dissipation (mw) d
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